BC856ASQ

Document number: DS38957 Rev. 1 - 2

2 of 6

www.diodes.com

June 2016

© Diodes Incorporated

BC856ASQ

Characteristic

Symbol

Value

Unit

Collector

– Base Voltage

-80

V

Collector

– Emitter Voltage

-65

V

Emitter

– Base Voltage

-5.0

V

Collector Current

-100

mA

Peak Collector Current

-200

mA

Peak Emitter Current

-200

mA

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 6)

200

mW

Thermal Resistance, Junction to Ambient Air (Note 6)

625

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector

– Base Breakdown Voltage

-80

—

—

V

Collector

– Emitter Breakdown Voltage

-65

—

—

V

Emitter

– Base Breakdown Voltage

-5

—

—

V

DC Current Gain

125

180

250

—

Collector

– Emitter Saturation Voltage

—

-75

-250

-300

-650

mV

Base

– Emitter Saturation Voltage

—

—

-700

-850

—

mV

Base

– Emitter Voltage

-600

—

-650

—

-750

-820

mV

Collector

– Cutoff Current

—

—

—

—

—

—

-15

-15

-4.0

nA

nA

µA

Gain Bandwidth Product

100

—

—

MHz

f = 100MHz

Collector

– Base Capacitance

—

3

—

pF

Notes:

6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device

is measured when operating in a steady-state condition.

7. Short duration pulse test used to minimize self-heating effect.

.