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BAS316WS 数据表(PDF) 2 Page - Diotec Semiconductor |
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BAS316WS 数据表(HTML) 2 Page - Diotec Semiconductor |
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2 / 2 page ![]() BAS316WS Characteristics Kennwerte Forward voltage Durchlass-Spannung 1 ) Tj = 25° C IF = 1 mA 10 mA 50 mA 150 mA VF < 0.715 V < 0.855 V < 1.0 V < 1.25 V Leakage current Sperrstrom 1) Tj = 25° C VR = 25 V 75 V IR < 30 nA < 1 µA Tj = 150° C VR = 25 V 75 V IR < 30 µA < 50 µA Max. junction capacitance Max. Sperrschichtkapazität VR = 0 V, f = 1 MHz CT < 1.5 pF Reverse recovery time Sperrverzug IF = 10 mA über/ through IR = 10 mA bis / to IR = 1 mA trr < 4 ns Thermal resistance junction to ambient Wärmewiderstand Sperrschicht – Umgebung RthA < 500 K/W 2) Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 Tested with pulses tp = 300 µs, duty cycles ≤ 2 % gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2 % 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG 120 100 80 60 40 20 0 [%] I FAV Rated forward current versus ambient temperature ) 2 Zul. Richtstrom in Abh. von der Umgebungstemp. ) 2 [°C] T A 150 100 50 0 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) V F [V] 1.4 1.0 0.8 0.6 0.4 0 [A] I F 10-4 10 -3 10 -2 10 -1 1 T = 25°C j T = 100°C j |
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