BC548C datasheet(1/2 Pages) DIOTEC

部件名	BC548C

功能描述	General Purpose NPN Transistors

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制造商	DIOTEC [Diotec Semiconductor]

网页	http://www.diotec.com

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1 / 2 page

BC546 ... BC549

General Purpose NPN Transistors

Universal-NPN-Transistoren

IC

= 100 mA

hFE ~ 110/200/420

Tjmax = 150°C

VCEO = 30...65 V

Ptot = 500 mW

Version 2018-02-01

TO-92 (10D3)

(1)

(2)

Dimensions - Maße [mm]

Typical Applications

Signal processing,

Switching, Amplification

Commercial grade 1)

Typische Anwendungen

Signalverarbeitung,

Schalten, Verstärken

Standardausführung 1)

Features

General Purpose

Three current gain groups

Compliant to RoHS, REACH,

Conflict Minerals 1)

Besonderheiten

Universell anwendbar

Drei Stromverstärkungsklassen

Konform zu RoHS, REACH,

Konfliktmineralien 1)

Mechanical Data 1)

Mechanische Daten 1)

(1) Taped in ammo pack

(Raster 2.54)

(2) On request: in bulk

(Raster 1.27, suffix “BK”)

4000

5000

(1) Gegurtet in Ammo-Pack

(Raster 2.54)

(2) Auf Anfrage: Schüttgut

(Raster 1.27, Suffix “BK”)

Weight approx.

0.01 g

Gewicht ca.

Case material

UL 94V-0

Gehäusematerial

Solder & assembly conditions

260°C/10s

Löt- und Einbaubedingungen

MSL N/A

Current gain groups

Stromverstärkungsgruppen

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BC546A

BC547A

BC548A

BC549A

BC546B

BC547B

BC548B

BC549B

BC546C

BC547C

BC548C

BC549C

BC556 ... BC559

Maximum ratings 2)

Grenzwerte 2)

BC546

BC547

BC548/549

Collector-Emitter-voltage – Kollektor-Emitter-Spannung

E-B short

VCES

80 V

50 V

30 V

Collector-Emitter-voltage – Kollektor-Emitter-Spannung

B open

VCEO

65 V

45 V

30 V

Emitter-Base-voltage – Emitter-Basis-Spannung

C open

VEBO

80 V

50 V

30 V

Emitter-Base-voltage

C open

VEBO

5 V

Power dissipation – Verlustleistung

Ptot

500 mW 3)

Collector current – Kollektorstrom

DC

IC

100 mA

Peak Collector current – Kollektor-Spitzenstrom

ICM

200 mA

Peak Base current – Basis-Spitzenstrom

IBM

200 mA

Peak Emitter current – Emitter-Spitzenstrom

- IEM

200 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

Tj

TS

-55...+150°C

-55…+150°C

1

Please note the detailed information on our website or at the beginning of the data book

Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches

2

TA = 25°C, unless otherwise specified – TA = 25°C, wenn nicht anders angegeben

3

Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

http://www.diotec.com/

1

2 x 2.54

C B E

2 x 1.27

C B E

4.6±0.1

Pb

RoHS

类似零件编号 - BC548C

制造商	部件名	数据表	功能描述
Motorola, Inc	BC548C	193Kb / 6P	Amplifier Transistors
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Fairchild Semiconductor	BC548C	21Kb / 2P	NPN General Purpose Amplifier
Micro Commercial Compon...	BC548C	1Mb / 4P	NPN Silicon Amplifier Transistor 625mW

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类似说明 - BC548C

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