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EMIF03-SIM01 数据表(PDF) 5 Page - STMicroelectronics |
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EMIF03-SIM01 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 11 page ![]() EMIF03-SIM01 5/11 TEST BOARD EMI03 SIM01 50 Ω Vg 50 Ω Fig. A2: Measurements conditions In addition with the filtering the EMIF03-SIM01 is particularly optimized to perform ESD protection. ESD protection is based on the use of device which clamps at: VV R I cl br d pp =+ ⋅ This protection function is splitted in 2 stages. As shown in Figure A3, the ESD strikes are clamped by the first stage S1 and then its remaining overvoltage is applied to the second stage through the resistor R. Such a configuration makes the output voltage very low at the Vout level. ESD PROTECTION EMIF03-SIM01 S1 R = 100 or 47 ΩΩ S2 Rg Rd Rd VBR VBR Vg R load ESD Surge Device to be protected Vin Vout Fig. A3: ESD clamping behavior |
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