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M48Z35 数据表(PDF) 8 Page - STMicroelectronics |
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M48Z35 数据表(HTML) 8 Page - STMicroelectronics |
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8 / 20 page ![]() M48Z35, M48Z35Y 8/20 READ Mode The M48Z35/Y is in the READ Mode whenever W (WRITE Enable) is high, E (Chip Enable) is low. The device architecture allows ripple-through ac- cess of data from eight of 264,144 locations in the static storage array. Thus, the unique address specified by the 15 Address Inputs defines which one of the 32,768 bytes of data is to be accessed. Valid data will be available at the Data I/O pins within Address Access time (tAVQV) after the last address input signal is stable, providing that the E and G access times are also satisfied. If the E and G access times are not met, valid data will be available after the latter of the Chip Enable Access time (tELQV) or Output Enable Access time (tGLQV). The state of the eight three-state Data I/O signals is controlled by E and G. If the outputs are activat- ed before tAVQV, the data lines will be driven to an indeterminate state until tAVQV. If the Address In- puts are changed while E and G remain active, output data will remain valid for Output Data Hold time (tAXQX) but will go indeterminate until the next Address Access. Figure 8. READ Mode AC Waveforms Note: WRITE Enable (W)= High. AI00925 tAVAV tAVQV tAXQX tELQV tELQX tEHQZ tGLQV tGLQX tGHQZ VALID A0-A14 E G DQ0-DQ7 VALID |
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