2

PI3L100

3.3V, Wide Bandwidth Quad 2:1, Mux/Demux LanSwitch

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PS8504

11/13/00

Description

Test Conditions

Typ

Max.

Units

Input Capacitance

3

pF

Capacitance, Switch Off (Y)

17

pF

Capacitance, Switch On

25

pF

Capacitance, Switch Off (A/B)

8

pF

Maximum Ratings

(Above which the useful life may be impaired. For user guidelines, not tested.)

Note:

Stresses greater than those listed under MAXIMUM

RATINGS may cause permanent damage to the

device. This is a stress rating only and functional

operation of the device at these or any other condi-

tions above those indicated in the operational sec-

tions of this specification is not implied. Exposure

to absolute maximum rating conditions for ex-

tended periods may affect reliability.

Notes:

1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for applicable device type.

3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.

Storage Temperature ............................................................. –65°C to +150°C

Ambient Temperature with Power Applied ................................. 0°C to +70°C

Supply Voltage to Ground Potential (Inputs & Vcc Only) ...... –0.5V to +4.6V

Supply Voltage to Ground Potential (Outputs & D/O Only) ... –0.5V to +4.6V

DC Input Voltage ..................................................................... –0.5V to +4.6V

DC Output Current ............................................................................... 120 mA

Power Dissipation ...................................................................................... 0.5W

s

r

e

t

e

m

a

r

a

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o

i

t

p

i

r

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s

e

D)

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(

s

n

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i

t

i

d

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C

t

s

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T.

n

i

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y

T

)

2

(

.

x

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H

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c

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L

d

e

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t

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a

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a

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G0

.

2—

—

V

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V

W

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.

0

–—

8

.

0

I

t

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r

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u

C

H

G

I

H

t

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p

n

C

V

,

.

x

a

M

=

N

I

V

=

C

C

——

1

±

µA

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t

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u

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W

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L

t

u

p

n

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V

,

.

x

a

M

=

N

I

D

N

G

=—

—

1

±

I

H

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t

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p

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p

m

I

h

g

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H0

≤

B

,

A

C

——

1

±

I

e

g

a

t

l

o

V

e

d

o

i

D

p

m

a

l

C

I

,

.

n

i

M

=

N

I

A

m

8

1

–

=—

2

.

1

–V

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n

e

r

r

u

C

t

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u

c

r

i

C

t

r

o

h

S

)

3

(

V

=

)

A

(

B

,

V

0

=

)

B

(

A

C

C

0

0

1—

—

A

m

s

n

i

P

l

o

r

t

n

o

C

t

a

s

i

s

e

r

e

t

s

y

H

t

u

p

n

I—

0

5

1—

V

m

O

)

6

(e

c

n

a

t

s

i

s

e

R

n

O

h

c

t

i

w

S

C

V

,

.

n

i

M

=

N

I

I

,

V

0

=

N

O

A

m

8

4

=—

5

7

Ω

C

V

,

.

n

i

M

=

N

I

I

,

V

4

.

2

=

N

O

A

m

5

1

=—

0

15

1

O

h

c

t

a

M

e

c

n

a

t

s

i

s

e

R

n

I

W

O

L

=

E

,

V

0

.

3

=—

—

—

Note:

1. This parameter is determined by device characterization but is not production tested.