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RFHCS362AF 数据表(PDF) 31 Page - Microchip Technology |
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RFHCS362AF 数据表(HTML) 31 Page - Microchip Technology |
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31 / 60 page ![]() © 2002 Microchip Technology Inc. Preliminary DS41189A-page 31 rfHCS362G/362F 6.3.2 CRYSTAL OSCILLATOR FSK OPERATION The rfHCS362F crystal oscillator can be configured for FSK operation. Figure 6-2 shows an example FSK cir- cuit. Capacitors C1 and C2 achieve FSK modulation by pulling the crystal. When DATAFSK = 1, FSKOUT is high-impedance effectively coupling only capacitor C1 to the crystal and the resulting transmit frequency equals fMAX. When DATAFSK = 0, FSKOUT is grounded to VSSRF and will parallel capacitor C2 with C1. The resulting transmit frequency will equal fMIN. Selecting the appropriate values for C1 and C2 sets the center frequency and frequency deviation. Capacitor C1 sets fMAX and capacitors C1 and C2 in parallel set fMIN. The graph in Figure 6-3 illustrates this relation- ship. The transmit center frequency f C is defined as: The frequency deviation of the transmit frequency is defined as: TABLE 6-3: TYPICAL TRANSMIT CENTER FREQUENCY AND FREQUENCY DEVIATION (FSK MODE) (1) FIGURE 6-2: EXAMPLE FSK EXTERNAL CRYSTAL CIRCUIT FIGURE 6-3: LOAD CAPACITANCE VERSUS CHANGE IN TRANSMITTED FREQUENCY Layout considerations - Avoid parallel traces in order to reduce circuit stray capacitance. Keep traces as short as possible. Isolate components to prevent cou- pling. Use ground traces to isolate signals. 2 min max f f f c + = 2 min max f f f − = ∆ C2 = 1000 pF C2 = 100 pF C2 = 47 pF C1 (pF) Freq (MHz) / Dev (kHz) Freq (MHz) / Dev (kHz) Freq (MHz) / Dev (kHz) 22 433.612 / 34 433.619 / 27 433.625 / 21 33 433.604 / 25 433.610 / 19 433.614 / 14 39 433.598 / 20 433.604 / 14 433.608 / 10 47 433.596 / 17 433.601 / 11.5 433.604 / 8 68 433.593 / 13 433.598 / 9 433.600 / 5.5 100 433.587 / 8 —— Note 1: Standard Operating Conditions (unless otherwise stated) TA = 25°C, RFEN = 1, VDDRF = 3V, fXTAL = 13.55 MHz XTAL rfHCS362F X1 C1 C2 FSKOUT Frequency (MHz) Fmax Fmin C1 C1||C2 DATAFSK = 1 DATAFSK = 0 Load Capacitance (pF) |
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