IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTH2N150

Fig. 7. Transconductance

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

00.511.5

22.533.5

125ºC

25ºC

Fig. 8. Forward Voltage Drop of Intrinsic Diode

0

1

2

3

4

5

6

7

0.3

0.4

0.5

0.6

0.7

0.8

0.9

Fig. 9. Gate Charge

0

2

4

6

8

10

0

5

10

15

20

25

30

Fig. 10. Capacitance

10

100

1,000

10,000

0

5

10

15

20

25

30

35

40

f = 1 MHz

Ciss

Crss

Coss

Fig. 12. Maximum Transient Thermal Impedance

0.001

0.01

0.1

1

0.00001

0.0001

0.001

0.01

0.1

1

10

Pulse Width - Seconds

Fig. 11. Forward-Bias Safe Operating Area

0.01

0.1

1

10

10

100

1,000

10,000

Single Pulse

1ms

100µs

10ms

DC

100ms

IXYS REF: T_2N150 (4L-R97) 3-17-15