STPS20170CT

4/5

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

0

25

50

75

100

125

150

175

I(µA)

R

V(V)

R

T =175°C

j

T =150°C

j

T =125°C

j

T =100°C

j

T =25°C

j

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

10

100

1000

1

10

100

1000

C(pF)

V(V)

R

F=1MHz

V

=30mV

T =25°C

OSC

RMS

j

Fig. 8: Junction capacitance versus reverse voltage

applied (typical values, per diode).

I(A)

FM

0.1

1.0

10.0

100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

T =125°C

(typical values)

j

T =125°C

(maximum values)

j

T =25°C

(maximum values)

j

V(V)

FM

Fig. 9: Forward voltage drop versus forward

current (per diode).