IRFD9110 datasheet(2/9 Pages) VISHAY

2 / 9 page

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Document Number: 91138

S10-2464-Rev. C, 25-Oct-10

IRFD9110, SiHFD9110

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

 300 μs; duty cycle  2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

120

°C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 μA

- 100

VDS Temperature Coefficient

V

DS/TJ

Reference to 25 °C, ID = - 1 mA

- 0.091

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 μA

- 2.0

- 4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = - 100 V, VGS = 0 V

- 100

μA

VDS = - 80 V, VGS = 0 V, TJ = 150 °C

- 500

Drain-Source On-State Resistance

RDS(on)

VGS = - 10 V

ID = - 0.42 Ab

1.2



Forward Transconductance

gfs

VDS = - 50 V, ID = - 0.42 A

0.60

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = - 25 V,

f = 1.0 MHz, see fig. 5

200

Output Capacitance

Coss

-94

Reverse Transfer Capacitance

Crss

-18

Total Gate Charge

VGS = - 10 V

ID = - 4.0 A, VDS = - 80 V

see fig. 6 and 13b

8.7

Gate-Source Charge

Qgs

2.2

Gate-Drain Charge

Qgd

4.1

Turn-On Delay Time

td(on)

VDD = - 50 V, ID = - 4.0 A

Rg = 24 , RD = 11

see fig. 10b

-10

Rise Time

-27

Turn-Off Delay Time

td(off)

-15

Fall Time

-17

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.0

Internal Source Inductance

-6.0

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

- 0.70

Pulsed Diode Forward Currenta

ISM

- 5.6

Body Diode Voltage

VSD

TJ = 25 °C, IS = - 0.7 A, VGS = 0 Vb

- 5.5

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = - 4.0 A, dI/dt = 100 A/μsb

160

Body Diode Reverse Recovery Charge

Qrr

0.15

0.30

μC

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