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VBUS052BD-HTF 数据表(PDF) 2 Page - Vishay Siliconix

部件名 VBUS052BD-HTF
功能描述  Low Capacitance, 2-Line ESD Protection Diode
PDF  6 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

VBUS052BD-HTF 数据表(HTML) 2 Page - Vishay Siliconix

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VBUS052BD-HTF
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 03-May-17
2
Document Number: 81788
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
APPLICATION NOTE
The VBUS052BD-HTF is a two-line ESD protection device with the characteristic of a Z-diode with a high ESD immunity and a
very low capacitance which makes it usable for high frequency applications like USB2.0 or HDMI.
With the VBUS052BD-HTF two high speed data lines can be protected against transient voltage signals like ESD (electro static
discharge). Connected to the data line (pin 1 and 2) and to ground (pin 3) negative transients will be clamped close below the
ground level while positive transients will be clamped close above the 5 V working range. The clamping behavior of the
VBUS052BD-HTF is bidirectional but asymmetrical (BiAs) and so it offers the best protection for applications running up to 5 V.
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330
/150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR
Fig. 4 - Typical Forward Current IF vs. Forward Voltage VF
ELECTRICAL CHARACTERISTICS VBUS052BD-HTF
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Protection paths
Number of lines which can be protected
Nchannel
-
-
2
lines
Reverse stand-off voltage
at IR = 0.1 μA; pin 1 or pin 2 to pin 3
VRWM
--
5
V
Reverse current
at VR = VRWM = 5 V; pin 1 or pin 2 to pin 3
IR
-
< 0.01
0.1
μA
Reverse breakdown voltage
at IR = 1 mA; pin 1 or pin 2 to pin 3
VBR
6.9
7.9
8.7
V
Reverse clamping voltage
at IPP = 3 A, acc. IEC 61000-4-5;
pin 1 or pin 2 to pin 3
VC
--
16
V
Forward clamping voltage
at IF = 3 A, acc. IEC 61000-4-5;
pin 3 to pin 1 or pin 2
VF
-4.8
6
V
Capacitance
at VR = 0 V; f = 1 MHz; pin 1 or pin 2 to pin 3
CD
-1.5
2.5
pF
0 %
20 %
40 %
60 %
80 %
100 %
120 %
-10 0 10203040 50607080 90 100
Time (ns)
Rise time = 0.7 ns to 1 ns
53 %
27 %
20557
0 %
20 %
40 %
60 %
80 %
100 %
010
20
30
40
Time (µs)
20 µs to 50 %
8 µs to 100 %
20548
0.0
0.5
1.5
2.0
2.5
0123456
V
IN (V)
20942
f = 1 MHz
1.0
0.001
0.01
0.1
1
10
100
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
V
F (V)
20943



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