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VBUS054CV-HS3 数据表(PDF) 2 Page - Vishay Siliconix

部件名 VBUS054CV-HS3
功能描述  4-Line BUS-Port ESD-Protection
PDF  7 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

VBUS054CV-HS3 数据表(HTML) 2 Page - Vishay Siliconix

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Document Number 81760
Rev. 1.1, 04-Sep-08
VBUS054CV-HS3
Vishay Semiconductors
For technical support, please contact: ESD-Protection@vishay.com
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
VBUS054CV-HS3
Date line: pin 1 , 3, 4 or 6 to pin 2
VBUS054CV-HS3
VBUS-line: pin 5 to pin 2
Application Note
With the VBUS054CV-HS3 a double, high speed USB-port can be protected against transient voltage signals.
Negative transients will be clamped close below the ground level while positive transients will be clamped close
above the 5 V working range. An avalanche diode clamps the supply line (VBUS at pin 5) to ground (pin 2). The
high speed data lines, D1+, D2+, D1- and D2- , are connected to pin 1, 3, 4 and 6. As long as the signal voltage
on the data lines is between the ground- and the VBUS -level, the low capacitance PN-diodes offer a very high
isolation to VBUS , ground and to the other data lines. But as soon as any transient signal exceeds this working
range, one of the PN-diodes gets in the forward mode and clamps the transient to ground or the avalanche
break through voltage level.
Parameter
Test conditions/remarks
Symbol
Min.
Typ.
Max.
Unit
Protection paths
Number of line which can be protected
Nlines
4lines
Reverse working voltage
at IR = 0.1 µA
VRWM
5V
Reverse current
at VIN = VRWM = 5 V
IR
< 0.01
0.1
µA
Reverse breakdown voltage
at IR = 1 mA
VBR
77.9
8.6
V
Reverse clamping voltage
at IPP = 11 A; acc. IEC 61000-4-5
VC
18
22
V
Forward clamping voltage
at IF = 11 A; acc. IEC 61000-4-5
VF
6.5
8
V
Data line capacitance
VR (at I/O pin) = 0 V;
VR (at pin 5) = 5 V; f = 1 MHz
CD
1.2
2.5
pF
Line Symmetry
Difference of the line capacitances
dCD
0.2
pF
Parameter
Test conditions/remarks
Symbol
Min.
Typ.
Max.
Unit
Reverse working voltage
at IR = 0.1 µA
VRWM
56.6
V
Reverse current
at VIN = VRWM = 5 V
IR
< 0.01
0.1
µA
Reverse breakdown voltage
at IR = 1 mA
VBR
77.9
8.6
V
Reverse clamping voltage
at IPP = 13 A; acc. IEC 61000-4-5
VC
18
22
V
Forward clamping voltage
at IF = 13 A; acc. IEC 61000-4-5
VF
7V
Line capacitance
VR (at pin 5) = 0 V; f = 1 MHz
CD
190
pF



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