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BAS70WS 数据表(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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BAS70WS 数据表(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1 / 3 page ![]() Production specification Schottky barrier diodes BAS70WS B012 www.gmesemi.com Rev.A 1 FEATURES Low turn-on voltage Fast switching PN junction guard for transient and ESD protection APPLICATIONS Surface mount fast switching diode SOD-323 ORDERING INFORMATION Type No. Marking Package Code BAS70WS K73 SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Characteristic Symbol Value Unit Peak repetitive peak reverse voltage Working peak reverse voltage DC Reverse Voltage VRRM VRWM VR 70 V RMS reverse voltage VR(RMS) 49 V Forward Continuous Current IF 70 mA Peak forward surge current@<1.0s IFSM 100 mA Power Dissipation Pd 200 mW Thermal Resistance Junction to Ambient RθJA 625 ℃ /W Operating Junction Temperature Range Tj -55 to +125 ℃ Storage Temperature Range TSTG -65 to +150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage V(BR)R 70 - V IR=10μA Forward Voltage VF - 410 1000 mV IF=1.0mA IF=15mA Reverse Current IR - 100 nA VR=50V Capacitance between terminals CT - 2 pF VR=0,f=1.0MHz Reverse Recovery Time trr - 5 ns IF=IR=10mA, RL=100Ω Pb Lead-free |
类似零件编号 - BAS70WS |
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类似说明 - BAS70WS |
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