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JSW2-63DR 数据表(PDF) 1 Page - Mini-Circuits |
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JSW2-63DR 数据表(HTML) 1 Page - Mini-Circuits |
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1 / 6 page ![]() SPDT RF Switch Page 1 of 6 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com The Big Deal Product Overview JSW2-63DR+ is a high-power reflective SPDT RF switch, with reflective short on output ports in the OFF state. Made using a Silicon-on-Insulator process, it provides very high IP3 (55 dBm typ.). This switch also has a built-in CMOS driver and negative voltage generator, all packaged in a tiny 2x2mm package, enabling it to operate over wideband and fit into tight spaces. Feature Advantages Wideband operation 5-6000 MHz Enables a single component to be used in a vast array of applications from VHF up to 6 GHz. High IIP3: 55 dBm typ. Results in little or negligible inter-modulation generation, meeting requirements for digital communication signals. Low Loss, 0.33 dB at 1 GHz & high input power, 3W Low loss and high power capability enables a single switch to be used for a variety of applications, saving inventory. Built in negative voltage generator Operates with single positive supply voltage; no need for DC blocking capacitors, unless external DC is present at the RF ports. Built-in CMOS driver No need for external driver, saving PCB space and cost. Tiny MCLP package 2 x 2mm, 12-lead Provides low inductance, repeatable transitions, and excellent thermal contact to PCB. Key Features 50 Ω 5 to 6000 MHz High Power 3W • Single Positive Supply Voltage • High Power P0.1dB, 3W • Low Insertion Loss, 0.33 dB at 1 GHz JSW2-63DR+ CASE STYLE: MT1818 |
类似零件编号 - JSW2-63DR |
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类似说明 - JSW2-63DR |
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