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EMIF03-SIM01F2 数据表(PDF) 2 Page - STMicroelectronics |
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EMIF03-SIM01F2 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() EMIF03-SIM01F2 2/7 Table 2: Absolute Ratings (limiting values) Table 3: Electrical Characteristics (Tamb = 25°C) Symbol Parameter and test conditions Value Unit Tj Maximum junction temperature 125 °C Top Operating temperature range - 40 to + 85 °C Tstg Storage temperature range - 55 to + 150 °C Symbol Parameter VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage VCL Clamping voltage Rd Dynamic impedance IPP Peak pulse current RI/O Series resistance between Input & Output Cline Input capacitance per line Symbol Test conditions Min. Typ. Max. Unit VBR IR = 1 mA 6V IRM VRM = 3V per line 1µA Rd 1.5 Ω R1 95 100 105 Ω R2 44.65 47 49.35 Ω R3 95 100 105 Ω Cline @ 0V 35 pF Figure 3: S21 (dB) attenuation measurement Figure 4: Analog crosstalk measurements Aplac 7.60 User: STMicroelectronics Feb 22 2001 100.0k 1.0M 10.0M 100.0M 1.0G -50.00 -45.00 -40.00 -35.00 -30.00 -25.00 -20.00 -15.00 -10.00 -5.00 0.00 dB f/Hz B3_B1(CLK) A3_A2(RST) C3_C1(DAT) dB MHz I V IF IRM IR IPP VRM VF VBR VCL |
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