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CDBJFSC3650-G 数据表(PDF) 2 Page - Comchip Technology |
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CDBJFSC3650-G 数据表(HTML) 2 Page - Comchip Technology |
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2 / 3 page ![]() Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Conditions Symbol Typ Max Unit Typical Characteristics ( ) CDBJFSC3650-G Page 2 pF C Total capacitance Total capacitive charge Forward voltage VR = 0V , TJ = 25°C , f = 1 MHZ µA VR = 400V , TJ = 150°C 1.7 100 VF IF = 3 A , TJ = 25°C IF = 3 A , TJ = 175°C VR = 650V , TJ = 25°C VR = 650V , TJ = 175°C IR V VR = 200V , TJ = 25°C , f = 1 MHZ - nC 1.4 Reverse Voltage, VR (V) Fig.4 - Capacitance vs. Reverse Voltage 40 80 100 200 0 160 0.01 0.1 1 10 100 1000 Reverse current QC = ∫ C(V) dv VR 0 QC 1.8 23 190 10 20 11 QW-BSC10 REV:A Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. Fig.1 - Forward Characteristics Forward Voltage, VF (V) 0 1 4 6 2.0 0 1.5 2.5 0.5 2 3 5 1.0 TJ=25°C TJ=75°C T=125°C J T=175°C J Reverse Voltage, VR (V) Fig.2 - Reverse Characteristics 0 0.010 0.040 0 200 400 800 0.020 0.030 100 300 600 500 700 0.015 0.025 0.035 0.005 T=175°C J T=125°C J TJ=25°C TJ=75°C 20 60 120 140 180 Case Tempature, TC (°C) Fig.3 - Current Derating 150 175 75 125 40 35 30 10 0 50 100 25 25 20 15 5 10% Duty 30% Duty 50% Duty 70% Duty D.C. Silicon Carbide Power Schottky Diode |
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