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LP6303 数据表(PDF) 5 Page - Lowpower Semiconductor inc |
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LP6303 数据表(HTML) 5 Page - Lowpower Semiconductor inc |
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5 / 11 page ![]() LP6303-01 Apr.-2014 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 5 of 11 Preliminary Datasheet LP6303 Electrical Characteristics (VINX=5V, VCC=5V, TA=25°C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units Input Supply Voltage Input Voltage VINX 2.2 5.5 V Control Circuit Input Voltage VCC 2.2 5.5 V Buck Converter Shutdown Supply Current ISD VEN = 0V 0.1 1 μA Quiescent Current IQ VEN = 2V, No Load 280 μA UVLO Threshold VUVLO VIN Rising 2 V UVLO Hysteresis VUV-HYST 0.1 V Output Load Current ILOAD 2 A Reference Voltage VREF 0.588 0.6 0.612 V Switching Frequency FSW ILOAD = 100mA 1 1.5 2 MHz PMOS Current Limit ILIM-P 3 A PMOS On-Resistance Note RDS(ON)-P ILOAD = 100mA 100 mΩ NMOS On-Resistance Note RDS(ON)-N ILOAD = 100mA 90 mΩ Enable Pin Input Low Voltage VEN-L 0.4 V Enable Pin Input High Voltage VEN-H 1.5 V Enable Input Current IEN 5 uA Output Voltage Soft Start tSS (0%→90%)VOUT 450 us Over-Temperature Shutdown Threshold TSD 150 ℃ Maximum Duty Cycle DMAX 100 % Note: MOSFET on-resistance specifications are guaranteed by correlation to wafer level measurements. |
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