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LP6312 数据表(PDF) 5 Page - Lowpower Semiconductor inc |
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LP6312 数据表(HTML) 5 Page - Lowpower Semiconductor inc |
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5 / 12 page ![]() LP6312-02 May.-2013 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 5 of 12 Preliminary Datasheet LP6312 Electrical Characteristics (VINX=3.6V, VCC=3.6V, TA=25°C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units Input Supply Voltage Input Voltage VINX 2.5 5.5 V Control Circuit Input Voltage VCC 2.5 5.5 V Buck Converter 1, 2 Shutdown Supply Current ISD VEN = 0V 0.1 1 μA Quiescent Current IQ Non-switching, No Load 70 μA UVLO Threshold VUVLO VIN Rising 1.8 2 2.2 V UVLO Hysteresis VUV-HYST 0.2 V Output Load Current ILOAD 2 A Reference Voltage VREF 0.588 0.6 0.612 V Switching Frequency FSW ILOAD = 100mA 1.5 MHz PMOS Current Limit ILIM-P 3 A PMOS On-Resistance RDS(ON)-P ILOAD = 100mA 100 mΩ NMOS On-Resistance RDS(ON)-N ILOAD = 100mA 90 mΩ Enable Pin Input Low Voltage VEN-L 0.4 V Enable Pin Input High Voltage VEN-H 1.4 V Maximum Duty Cycle DMAX 100 % Thermal Shutdown Thermal Shutdown Threshold TOTP 150 ℃ Thermal Shutdown Hysteresis THYST 20 ℃ Note: 1. MOSFET on-resistance specifications are guaranteed by correlation to wafer level measurements. 2. Thermal shutdown specifications are guaranteed by correlation to the design and characteristics analysis. |
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