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LP28021 数据表(PDF) 6 Page - Lowpower Semiconductor inc |
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LP28021 数据表(HTML) 6 Page - Lowpower Semiconductor inc |
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6 / 11 page ![]() LP28021-04 Apr.-2017 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 6 of 11 Preliminary Datasheet LP28021 Electrical Characteristics (TA=25℃. VIN=5V, unless otherwise noted.) Symbol Parameter Condition Min Typ Max Units VIN Input Voltage 3.8 5 36 V VOVP OVP threshold VIN increasing from 5~7V 5.8 6.1 6.4 V VHYS-OVP OVP hysteresis VIN decreasing from 7~5V 150 mV TOVP OVP active time VIN=5->10V 1 μs TON(OVP) OVP recovery time VIN=10->5V to output ON 9 ms ILIMIT Input current limit set (LP28021) RLIMIT=51K 1.9 A RLIMIT=82K 1.3 A RLIMIT=150K 0.85 A RLIMIT=NC 2.1 2.5 A TOCP Over current Protection detection time 30 ms VILIMIT ILIMIT Voltage 0.8 V TON(OCP) Over current Protection recovery time 1 s VEN(ON) Chip enable (LP28021A) 0.4 V VEN(OFF) Chip shutdown 1.4 V IQ Input Supply Current Charge Mode, RIBAT=10k 300 2000 μA Standby Mode (Charge Terminated) 200 500 μA VFLOAT Regulated Output (Float) Voltage IBAT=40mA(LP28021XXX) 4.158 4.2 4.242 V IBAT=40mA(LP28021XXX-43) 4.3 4.35 4.4 V IBAT BAT Pin Current RIBAT=1k, Current Mode 1000 mA RIBAT=2k, Current Mode 500 mA Standby Mode, VBAT=4.2V -2.5 -6 μA Shutdown Mode (RIBAT NC) ±1 ±2 μA Reverse Current, VBAT=-4.2V -1 mA ITRIKL Trickle Charge Current VBAT<2.8V 30 mA VTRIKL Trickle Charge Threshold Voltage RIBAT=10k, VBAT Rising 2.8 2.9 3.0 V VTRHYS Trickle Charge Hysteresis Voltage RIBAT=10k 120 mV VUV VIN Under voltage Lockout Threshold VVO from Low to High 3.8 V VUVHYS VIN Under voltage Lockout Hysteresis 500 mV VASD VVO–VBAT Lockout Threshold Voltage VVO from Low to High 100 mV VVO from High to Low 80 mV ITERM C/10 Termination Current Threshold RIBAT = 10k 10 %IBAT RIBAT = 2k 10 %IBAT VISET IBAT Pin Voltage RIBAT=10k, Current Mode 1 V I(CHRG/STDBY) CHRG/STDBY Pin Weak Pull-Down Current V(CHRG/STDBY)= 5V 5 μA V(CHRG/STDBY) CHRG/STDBY Pin Output Low Voltage I(CHRG/STDBY)=5mA 0.35 0.6 V ΔVRECHRG Recharge Battery Threshold Voltage VFLOAT-VRECHRG 100 150 200 mV TLIM Junction Temperature in Constant Temperature Mode 150 ℃ ΔTLIM OTP hysteresis 20 ℃ RON Power FET “ON” Resistance (Between VO and BAT) 300 mΩ |
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