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LP28400ACQVF 数据表(PDF) 5 Page - Lowpower Semiconductor inc |
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LP28400ACQVF 数据表(HTML) 5 Page - Lowpower Semiconductor inc |
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5 / 10 page ![]() LP28400A – 02 Sep.-2016 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 5 of 10 Preliminary Datasheet LP28400A Electrical Characteristics (TA = 25°C. unless otherwise noted.) Parameter Test Conditions Measured Limits Units Min Typ Max Quiescent current IQ 1 mA Internal LDO output VIN=6V V(VL) 4.9 5 5.1 V Input voltage regulation reference VREG 0.95 1 1.05 V Battery leakage current VBAT=8.4V, VIN=NC IBAT -10 uA VBAT=8.4V, VIN=5V -35 Program Charging Current From Rs to VBAT V(RS,VBAT) 47.5 50 52.5 mV Charge current limit VIN=5V IBATLIMIT 1.5 A CV voltage V(VBAT) 8.4 V Recharge threshold V(VBAT) 300 mV End of charge threshold From Rs to VBAT V(RS,VBAT) 5 mV Trickle charge voltage threshold V(VBAT) 6 V Trickle charge current From Rs to VBAT V(RS,VBAT) 10 mV Thermal protection Not tested in production 135 145 155 C Switching frequency LX 1 MHz UVLO input voltage Threshold VIN increasing VIN - 2.65 - V UVLO Hysteresis VIN decaying VIN - 150 - mV STAT low level Open drain pulled up with 5mA STAT 0.2 V Low side Rdson From LX to GND R(LX,GND) 60 mΩ THM threshold, Hot VTHM-L 0.28*V(VL) V THM threshold, Cold VTHM-H 0.74*V(VL) Note: Charge current set by: SENSE RSENSE R V BAT I |
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