Data Sheet

4

V 1.1

2017-10

TLE5309D

Dual GMR/AMR Angle Sensor

Functional description

1

Functional description

1.1

General

The TLE5309D comprises one GMR-based angle sensor IC mounted on the top and one AMR-based angle

sensor IC mounted on the bottom of a package lead frame in a flipped configuration, so the positions of the

sensitive elements in the package-plane coincide. This mounting technique ensures a minimum deviation of

the magnetic field orientation sensed by the two chips.

The Magneto Resistive (MR) sensors are implemented using vertical integration. This means that the MR

sensitive areas are integrated above the analog portion of the ICs. These MR elements change their resistance

depending on the direction of the magnetic field.

On each sensor, four individual MR elements are connected in a Wheatstone bridge arrangement. Each MR

element senses one of two components of the applied magnetic field:

The advantage of a full-bridge structure is that the amplitude of the MR signal is doubled and temperature

effects cancel out.

GMR Sensor

The output signal of a GMR bridge is unambiguous in a range of 180°. Therefore two bridges are oriented

orthogonally to each other to measure 360°.

Figure 2

Sensitive bridges of the GMR sensor (top die)

Note:

In Figure 2, the arrows in the resistors symbolize the direction of the reference layer. Size of the

sensitive areas is greatly exaggerated for better visualization.

GND

GMR Resistors

0°

N

S

90°