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KBPC3500FP 数据表(PDF) 2 Page - Diotec Semiconductor

部件名 KBPC3500FP
功能描述  Single Phase Bridge Rectifier
PDF  2 Pages
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制造商  DIOTEC [Diotec Semiconductor]
网页  http://www.diotec.com
标志 DIOTEC - Diotec Semiconductor

KBPC3500FP 数据表(HTML) 2 Page - Diotec Semiconductor

  KBPC3500FP_18 Datasheet HTML 1Page - Diotec Semiconductor KBPC3500FP_18 Datasheet HTML 2Page - Diotec Semiconductor  
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KBPC3500FP|WP ... KBPC3516FP|WP
Maximum ratings
1)
Grenzwerte
1)
Max. rectified output current on heatsink 300 cm
2
Dauergrenzstrom am Brückenausgang auf Kühlkörper 300 cm
2
R-load
C-load
TC = 55°C
2)
IFAV
35 A
28 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
TC = 55°C
2)
IFRM
80 A
Peak forward surge current
(half sine-wave)
Stoßstrom in Fluss-Richtung
(Sinus-Halbwelle)
KBPC3500FP|WP …
KBPC3510FP|WP
50 Hz (10 ms)
60 Hz (8.3 ms)
IFSM
375 A
400 A
KBPC3512FP|WP …
KBPC3516FP|WP
50 Hz (10 ms)
60 Hz (8.3 ms)
IFSM
300 A
330 A
Rating for fusing – Grenzlastintegral
t < 10 ms
i
2t
450 A
2s
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
Admissible mounting torque
Zulässiges Anzugsdrehmoment
10-32 UNF
M5
18 ± 10% lb.in.
2 ± 10% Nm
Characteristics
Kennwerte
Forward voltage – Durchlass-Spannung
Tj = 25°C
IF = 17.5 A
VF
< 1.1 V
3)
Leakage current – Sperrstrom
Tj = 25°C
VR = VRRM
IR
< 10 µA
3)
Isolation voltage terminals to case
Isolationsspannung Anschlüsse zum Gehäuse
VISO
> 2500 VRMS
2)
Reverse recovery time – Sperrverzug
IF = 0.5 A through/über IR = 1 A to IR = 0.25 A
trr
typ. 1500 ns
3)
Typical junction capacitance
Typische Sperrschichtkapazität
VR = 4 V
Cj
120 pF
3)
Thermal resistance junction to case (per device)
Wärmewiderstand Sperrschicht – Gehäuse (pro Bauteil)
RthC
< 1.5 K/W
2)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder oder Internet
1
TA = 25°C unless otherwise specified – TA = 25°C wenn nicht anders angegeben
2
“Case” designates metal baseplate – „Gehäuse“ bezeichnet die metallische Bodenplatte
3
Valid per diode – Gültig pro Diode
2
http://www.diotec.com/
© Diotec Semiconductor AG
120
100
80
60
40
20
0
[%]
I
FAV
Rated forward current versus case temperature )
3
Zul. Richtstrom in Abh. von der Gehäusetemp.
3)
[°C]
T
C
150
100
50
0
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
0.4
V
F
0.8
1.0
1.2
1.4
[V] 1.8
10
10
10
1
10
3
2
-1
[A]
I
F
T = 25°C
j
T = 125°C
j
375a-(17.5a-1.1v)



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