BPW34FASR datasheet(2/13 Pages) OSRAM

2 / 13 page

2016-03-31

Version 1.5

BPW 34 FASR

Maximum Ratings (TA = 25 °C)

Characteristics (TA = 25 °C)

Parameter

Symbol

Values

Unit

Operating and storage temperature range

op; Tstg

-40 ... 100

°C

Reverse voltage

(t < 2 min)

Total Power dissipation

tot

150

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

VESD

2000

Parameter

Symbol

Values

Unit

Photocurrent

R = 5 V, λ = 870 nm, Ee=1 mW/cm

(typ (min))

50 (≥ 40)

µA

Wavelength of max. sensitivity

(typ)

S max

880

Spectral range of sensitivity

(typ)

10%

(typ) 730

... 1100

Radiant sensitive area

(typ)

7.02

Dimensions of radiant sensitive area

(typ)

L x W

2.65 x 2.65

mm x

Half angle

(typ)

± 60

Dark current

R = 10 V)

(typ (max)) IR

2 (≤ 30)

Spectral sensitivity of the chip

(λ = 870 nm)

(typ)

λ typ

0.65

A / W

Quantum yield of the chip

(λ = 870 nm)

(typ)

0.93

Electro

/Photon

Open-circuit voltage

e = 0.5 mW/cm

2, λ = 870 nm)

(typ (min))

320 (≥ 250)

Short-circuit current

e = 0.5 mW/cm

2, λ = 870 nm)

(typ)

µA

Rise and fall time

(VR = 5 V, RL = 50 Ω, λ = 850 nm, IP = 800 µA)

(typ)

r, tf

0.02

µs

Forward voltage

(IF = 100 mA, E = 0)

(typ)

1.3

Capacitance

R = 0 V, f = 1 MHz, E = 0)

(typ)

Temperature coefficient of V

(typ)

-2.6

mV / K

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