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BPW34FS 数据表(PDF) 2 Page - OSRAM GmbH |
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BPW34FS 数据表(HTML) 2 Page - OSRAM GmbH |
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2 / 13 page ![]() 2016-06-30 2 Version 1.4 BPW 34 FS Maximum Ratings (TA = 25 °C) Characteristics (TA = 25 °C) Parameter Symbol Values Unit Operating and storage temperature range T op; Tstg -40 ... 100 °C Reverse voltage V R 16 V Reverse voltage (t < 2 min) V R 32 V Total Power dissipation P tot 150 mW ESD withstand voltage (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) VESD 2000 V Parameter Symbol Values Unit Photocurrent (V R = 5 V, λ = 950 nm, Ee=1 mW/cm 2) (typ (min)) IP 50 (≥ 40) µA Wavelength of max. sensitivity (typ) λ S max 950 nm Spectral range of sensitivity (typ) λ 10% (typ) 780 ... 1100 nm Radiant sensitive area (typ) A 7.02 mm 2 Dimensions of radiant sensitive area (typ) L x W 2.65 x 2.65 mm x mm Half angle (typ) ϕ ± 60 ° Dark current (V R = 10 V) (typ (max)) IR 2 (≤ 30) nA Spectral sensitivity of the chip (λ = 950 nm) (typ) S λ typ 0.7 A / W Quantum yield of the chip (λ = 950 nm) (typ) η 0.91 Electro ns /Photon Open-circuit voltage (E e = 0.5 mW/cm 2, λ = 950 nm) (typ (min)) VO 330 (≥ 275) mV Short-circuit current (E e = 0.5 mW/cm 2, λ = 950 nm) (typ) I SC 25 µA Rise and fall time (VR = 5 V, RL = 50 Ω, λ = 850 nm, IP = 800 µA) (typ) t r, tf 0.02 µs Forward voltage (IF = 100 mA, E = 0) (typ) VF 1.3 V Capacitance (V R = 0 V, f = 1 MHz, E = 0) (typ) C0 72 pF Temperature coefficient of V O (typ) TC V -2.6 mV / K |
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