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数据搜索系统，热门电子元器件搜索 |
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IRFS7540PbF 数据表(PDF) 3 Page - International Rectifier |
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IRFS7540PbF 数据表(HTML) 3 Page - International Rectifier |
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3 / 13 page  IRFB/S/SL7540PbF 3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 110 ––– ––– S VDS = 10V, ID = 65A Qg Total Gate Charge ––– 88 130 ID = 65A Qgs Gate-to-Source Charge ––– 22 ––– VDS = 30V Qgd Gate-to-Drain Charge ––– 28 ––– VGS = 10V Qsync Total Gate Charge Sync. (Qg – Qgd) ––– 60 ––– td(on) Turn-On Delay Time ––– 12 ––– ns VDD = 30V tr Rise Time ––– 76 ––– ID = 65A td(off) Turn-Off Delay Time ––– 58 ––– RG= 2.7 tf Fall Time ––– 56 ––– VGS = 10V Ciss Input Capacitance ––– 4555 ––– pF VGS = 0V Coss Output Capacitance ––– 415 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 270 ––– ƒ = 1.0MHz, See Fig.7 Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 430 ––– VGS = 0V, VDS = 0V to 48V Coss eff.(TR) Output Capacitance (Time Related) ––– 550 ––– VGS = 0V, VDS = 0V to 48V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 110 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 430 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS = 65A,VGS = 0V dv/dt Peak Diode Recovery dv/dt ––– 11 ––– V/ns TJ = 175°C,IS = 65A,VDS = 60V trr Reverse Recovery Time ––– 33 ––– ns TJ = 25°C VDD = 51V ––– 37 ––– TJ = 125°C IF = 65A, Qrr Reverse Recovery Charge ––– 36 ––– nC TJ = 25°C di/dt = 100A/µs ––– 47 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 1.9 ––– A TJ = 25°C nC D S G |
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