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M25P80 数据表(PDF) 31 Page - STMicroelectronics |
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M25P80 数据表(HTML) 31 Page - STMicroelectronics |
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31 / 41 page ![]() 31/41 M25P80 Table 14. Instruction Times (Device Grade 6) Table 15. Instruction Times (Device Grade 3) Note: 1. At 85°C 2. This is preliminary data Table 16. AC Measurement Conditions Note: Output Hi-Z is defined as the point where data out is no longer driven. Figure 22. AC Measurement I/O Waveform Test conditions specified in Table 9. and Table 16. Symbol Alt. Parameter Min. Typ. Max. Unit tW Write Status Register Cycle Time 5 15 ms tPP Page Program Cycle Time 1.4 5 ms tSE Sector Erase Cycle Time 1 3 s tBE Bulk Erase Cycle Time 10 20 s Test conditions specified in Table 9. and Table 16. Symbol Alt. Parameter Min. Typ.1,2 Max.2 Unit tW Write Status Register Cycle Time 8 15 ms tPP Page Program Cycle Time 1.5 5 ms tSE Sector Erase Cycle Time 1 3 s tBE Bulk Erase Cycle Time 10 20 s Symbol Parameter Min. Max. Unit CL Load Capacitance 30 pF Input Rise and Fall Times 5 ns Input Pulse Voltages 0.2VCC to 0.8VCC V Input Timing Reference Voltages 0.3VCC to 0.7VCC V Output Timing Reference Voltages VCC / 2 V AI07455 0.8VCC 0.2VCC 0.7VCC 0.3VCC Input and Output Timing Reference Levels Input Levels 0.5VCC |
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