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MM74HCT03 数据表(PDF) 3 Page - National Semiconductor (TI) |
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MM74HCT03 数据表(HTML) 3 Page - National Semiconductor (TI) |
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3 / 4 page ![]() AC Electrical Characteristics VCC e 50V TA e 25 C CL e 15 pF tr e tf e 6 ns unless otherwise noted Symbol Parameter Conditions Typ Units tPZL Maximum Propagation Delay RL e 1kX 7ns tPLZ Maximum Propagation Delay RL e 1kX 10 ns AC Electrical Characteristics VCC e 50V g10% CL e 50 pF tr e tf e 6 ns unless otherwise specified TAe25 C 74HCT 54HCT Symbol Parameter Conditions TAeb40 Cto a85 CTAeb55 Cto a125 C Units Typ Guaranteed Limits tPZL Maximum Propagation Delay RL e 1kX 10 20 25 30 ns tPLZ Maximum Propagation Delay RL e 1kX 12 20 25 30 ns tTHL Maximum Output Fall Time 10 15 19 22 ns CPD Power Dissipation Capacitance (per gate) 14 pF (Note 5) RL e % CIN Maximum Input Capacitance 5 10 10 pF Note 5 CPD determines the no load dynamic power consumption PDeCPD VCC2 faICC VCC and the no load dynamic current consumption ISeCPD VCC faICC Physical Dimensions inches (millimeters) Ceramic Dual-In-Line Package (J) Order Number MM54HCT03J or MM74HCT03J NS Package Number J14A 3 |
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