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M54HC643 数据表(PDF) 2 Page - National Semiconductor (TI) |
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M54HC643 数据表(HTML) 2 Page - National Semiconductor (TI) |
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2 / 6 page  Absolute Maximum Ratings (Notes12) If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply Voltage (VCC) b 05 to a70V DC Input Voltage DIR and G pins (VIN) b15 to VCCa15V DC Output Voltage (VIN VOUT) b 05 to VCCa05V Clamp Diode Current (ICD) g 20 mA DC Output Current per pin (IOUT) g 35 mA DC VCC or GND Current per pin (ICC) g 70 mA Storage Temperature Range (TSTG) b 65 Cto a150 C Power Dissipation (PD) (Note 3) 600 mW SO Package only 500 mW Lead Temperature (TL) (Soldering 10 seconds) 260 C Operating Conditions Min Max Units Supply Voltage (VCC)2 6 V DC Input or Output Voltage (VIN VOUT)0 VCC V Operating Temp Range (TA) MM74HC b 40 a 85 C MM54HC b 55 a 125 C Input RiseFall Times VCCe20V (tr tf) 1000 ns VCCe45V 500 ns VCCe60V 400 ns DC Electrical Characteristics (Note 4) TAe25 C 74HC 54HC Symbol Parameter Conditions VCC TAeb40 to 85 CTAeb55 to 125 C Units Typ Guaranteed Limits VIH Minimum High Level Input 20V 15 15 15 V Voltage 45V 315 315 315 V 60V 42 42 42 V VIL Maximum Low Level Input 20V 05 05 05 V Voltage 45V 135 135 135 V 60V 18 18 18 V VOH Minimum High Level Output VINeVIH or VIL Voltage lIOUTls20 mA 20V 20 19 19 19 V 45V 45 44 44 44 V 60V 60 59 59 59 V VINeVIH or VIL lIOUTls60 mA 45V 42 398 384 37 V lIOUTls78 mA 60V 57 548 534 52 V VOL Maximum Low Level Output VINeVIH or VIL Voltage lIOUTls20 mA 20V 0 01 01 01 V 45V 0 01 01 01 V 60V 0 01 01 01 V VINeVIH or VIL lIOUTls60 mA 45V 02 026 033 04 V lIOUTls78 mA 60V 02 026 033 04 V IIN Input Leakage VINeVCC or GND 60V g 01 g 10 g 10 m A Current (G and DIR) IOZ Maximum TRI-STATE Output VOUTeVCC or GND 60V g 05 g 50 g 10 m A Leakage Current Enable GeVIH ICC Maximum Quiescent Supply VINeVCC or GND 60V 80 80 160 m A Current IOUTe0 mA Note 1 Maximum Ratings are those values beyond which damage to the device may occur Note 2 Unless otherwise specified all voltages are referenced to ground Note 3 Power Dissipation temperature derating plastic ‘‘N’’ package b12 mW C from 65 Cto85 C ceramic ‘‘J’’ package b12 mW C from 100 Cto125 C Note 4 For a power supply of 5V g10% the worst case output voltages (VOH and VOL) occur for HC at 45V Thus the 45V values should be used when designing with this supply Worst case VIH and VIL occur at VCCe55V and 45V respectively (The VIH value at 55V is 385V) The worst case leakage current (IIN ICC and IOZ) occur for CMOS at the higher voltage and so the 60V values should be used VIL limits are currently tested at 20% of VCC The above VIL specification (30% of VCC) will be implemented no later than Q1 CY’89 2 |
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