www.berex.com

BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595

January 2015

Specifications are subject to change without notice. ©BeRex 2015

Rev. 1.3

BCF080T

HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 800 µm)

The BeRex BCF080T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 800 micron gate

width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise

while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either

wideband or narrow-band applications. The BCF080T is produced using state of the art metallization and

increased reliability.

Product Features

•

26.0 dBm Typical Output Power

•

11.0 dB Typical Power Gain @ 12 GHz

•

Low Phase Noise

•

0.3 X 800 Micron Recessed Gate

Applications

•

Commercial

•

Military / Hi-Rel

•

Test & Measurement

PARAMETER/TEST CONDITIONS

MINIMU

M

TYPICAL

MAXIMU

M

UNIT

160

240

320

mA

Gm

100

130

mS

Vp

-3.5

-2.0

V

-15

-11

V

-10

-7

V

Thermal Resistance (Au-Sn Eutectic Attach)

61

° C/W