R5000

200mA 5.0kV

High Voltage Silicon Rectifier Diode

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GETE ELECTRONIC CO.,LTD

Http://www.getedz.com

GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628

FAX:0086-20-8184 9638

2018-04 1 / 3

INTRODUCE:

HVGT high voltage silicon rectifier diodes is made

of high quality silicon wafer chip and high

reliability epoxy resin sealing structure, and

through professional testing equipment inspection

qualified after to customers.

FEATURES:

1. Low leakage.

2. Low forward voltage drop.

3. High current capability.

4. Conform to RoHS and SGS.

5. Epoxy resin molded in vacuumHave

anticorrosion in the surface.

APPLICATIONS:

1. Rectifier for high voltage power supply.

2. High voltage transformer rectifier.

3. Doubler rectifier circuit.

4. Accelerator power supply.

MECHANICAL DATA:

1. Case: epoxy resin molding.

2. Terminal: welding axis.

3. Net weight: 0.4 grams (approx).

SHAPE DISPLAY:

SIZE: (Unit:mm)

HVGT NAME: DO-15

MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value

Units

Repetitive Peak Renerse Voltage

5000

V

Maximum RMS Reverse Voltage

3500

V

Maximum DC Blocking Voltage

5000

V

Average Forward Current Maximum

200

mA

Non-Repetitive Forward Surge Current

30

A

Junction Temperature

150

°C

Allowable Operation Case Temperature

Tc

-65~+150

°C

Storage Temperature

-65~+150

°C

Items

Symbols

Condition

Data value

Units

Maximum Forward Voltage Drop

5.0

V

Maximum Reverse Current

5.0

uA

40

uA

Maximum Reverse Recovery Time

--

nS

Junction Capacitance

30

pF