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STD3PS25 数据表(PDF) 2 Page - STMicroelectronics

部件名 STD3PS25
功能描述  P-CHANNEL 250V - 2.1 OHM - 3A DPAK/IPAK MESH OVERLAY MOSFET
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STD3PS25 数据表(HTML) 2 Page - STMicroelectronics

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STD3PS25 - STD3PS25-1
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
2.77
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
275
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
250
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS = Max Rating
1µA
VDS = Max Rating, TC = 125 °C
10
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ± 20 V
±10
µA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 250 µA
234
V
RDS(on)
Static Drain-source On
Resistance
VGS =10 V,ID = 0.3 A
2.1
2.8
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Ciss
Input Capacitance
VDS =25V,f= 1MHz, VGS =0
260
pF
Coss
Output Capacitance
52
pF
Crss
Reverse Transfer
Capacitance
25
pF
RG
Gate-Input Resistance
f = 1 MHz,Gate DC Bias=0
Test Signal Level=20 mV
Open Drain
6
Ω



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