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MMBT4124 数据表(PDF) 4 Page - Diodes Incorporated |
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MMBT4124 数据表(HTML) 4 Page - Diodes Incorporated |
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4 / 7 page ![]() MMBT4124 Document number: DS30105 Rev. 13- 2 4 of 7 www.diodes.com April 2016 © Diodes Incorporated MMBT4124 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO 30 - V IC = 10μA, IE = 0 Collector-Emitter Breakdown Voltage (Note 9) BVCEO 25 - V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO 5.0 - V IE = 10μA, IC = 0 Collector-Base Cut-off Current ICBO - 50 nA VCB=20V, IE = 0 Emitter Base Cut-off Current IEBO - 50 nA VEB=3.0V, IC = 0 ON CHARACTERISTICS (Note 9) DC Current Gain hFE 120 60 360 - - IC = 2mA, VCE = 1.0V IC = 50mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(sat) - 0.30 V IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(sat) - 0.95 V IC = 50mA, IB = 5.0mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo - 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo - 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Small Signal Current Gain hfe 120 480 - VCE = 1.0V, IC = 2.0mA, f = 1.0kHz Current Gain-Bandwidth Product fT 300 - MHz VCE = 20V, IC = 10mA, f = 100MHz Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. |
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