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HCF4050B 数据表(PDF) 4 Page - STMicroelectronics |
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HCF4050B 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 9 page ![]() HCF4050B 4/9 DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ,tr =tf =20ns) (*) Typical temperature coefficient for all VDD value is 0.3 %/°C. TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance) RL =200KΩ RT =ZOUT of pulse generator (typically 50Ω) Symbol Parameter Test Condition Value (*) Unit VDD (V) VI (V) Min. Typ. Max. tTLH Output Transition Time 5 5 80 160 ns 10 10 40 80 15 15 30 60 tTHL Output Transition Time 5 5 30 60 ns 10 10 20 40 15 15 15 30 tPLH Propagation Delay Time 5 5 70 140 ns 10 10 40 80 510 45 90 15 15 30 60 515 40 80 tPHL Propagation Delay Time 5 5 55 110 ns 10 10 22 55 510 50 100 15 15 15 30 515 50 100 |
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