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SPP80P06P 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 SPP80P06P
功能描述  P-Channel MOSFET Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

SPP80P06P 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

  SPP80P06P Datasheet HTML 1Page - Inchange Semiconductor Company Limited SPP80P06P Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc P-Channel MOSFET Transistor
SPP80P06P，ISPP80P06P
·
FEATURES
·
Static drain-source on-resistance:
RDS(on)≤0.023Ω
·
Enhancement mode:
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
DESCRIPTION
·
175℃ operating temperature
·
Avalanche rated
·
dv/dt rated
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous
-80
A
IDM
Drain Current-Single Pulsed
-320
A
PD
Total Dissipation @TC=25℃
340
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(j-c)
Channel-to-case thermal resistance
0.4
℃
/W
Rth(j-a)
Channel-to-ambient thermal resistance
62
℃
/W


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