2015-12-14

2

Version 1.3

SFH 331

Maximum Ratings

Characteristics

Parameter

Symbol

Values

Unit

Operating and storage temperature range

T

-40 ... 100

°C

Junction temperature

T

j

100

°C

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

V

ESD

2000

V

Emitter 1

Forward current

30

mA

Surge current

0.5

A

Reverse voltage

V

R

5

V

Power consumption

P

tot

100

mW

Thermal resistance junction - ambient 1) page 16

R

thJA

450

K / W

Thermal resistance junction - solder point

R

thJS

350

K / W

Phototransistor

Collector current

15

mA

Collector surge current

(τ < 10 µs)

75

mA

Collector-emitter voltage

35

V

Total Power dissipation

P

tot

165

mW

Thermal resistance 1) page 16

R

thJA

450

K / W

The stated maximum ratings refer to the specified chip regardless of the operating status of the other

one.

Parameter

Symbol

Values

Unit

Emitter 1

Peak wavelength

(typ)

635

nm

Dominant wavelength

(typ)

628

nm

Spectral bandwidth at 50% of I

max

(I

(typ)

∆λ

45

nm

Half angle

(typ)

ϕ

± 60

°