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RBO40 数据表(PDF) 2 Page - STMicroelectronics |
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RBO40 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 10 page ![]() RBO40-40G / RBO40-40T 2/10 Symbol Parameter Value Unit IFSM Non repetitive surge peak forward current (Diode D1) tp=10ms 120 A IF DC forward current (Diode D1) Tc = 75°C 40 A VPP Peak load dump voltage (see note 1and 2) 5 pulses (1 minute between each pulse) 80 V PPP Peak pulse power between Input and Output (Transil T1) Tj initial = 25°C 10/1000 µs 1500 W Tstg Tj Storage temperature range Maximum junction temperature -40to + 150 150 °C TL Maximum lead temperature for soldering during 10 s at 4.5mm from case for TO220-AB 260 °C Note 1 : for a surge greater than the maximum value, the device will fail in short-circuit. Note 2 : see Load Dump curves. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Rth (j-c) Junction to case RBO40-40G RBO40-40T 1.0 1.0 °C/W Rth (j-a) Junction to ambient RBO40-40T 60 °C/W THERMAL RESISTANCE D1 T1 2 3 1 VCL 31 VRM 31 VF13 V13 I13 IRM 31 IR 31 Ipp31 VBR 31 T2 IF Ipp32 VRM 32 VBR 32 VCL 32 3 2 1 V32 I32 IR32 IRM 32 Ex :VF 13 . between Pin 1 and Pin 3 VBR 32 . between Pin 3 and Pin 2 |
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