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MP3398DGS 数据表(PDF) 15 Page - Monolithic Power Systems |
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MP3398DGS 数据表(HTML) 15 Page - Monolithic Power Systems |
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15 / 19 page ![]() MP3398D – 4-STRING, 350MA/STRING, STEP-UP, WHITE LED CONTROLLER MP3398D Rev. 1.0 www.MonolithicPower.com 15 5/23/2016 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2016 MPS. All Rights Reserved. Selecting the Power MOSFET The MP3398D is capable of driving a wide variety of N-channel power MOSFETs. The critical parameters for selecting a MOSFET are maximum drain-to-source voltage (VDS(MAX)), maximum current (ID(MAX)), on-resistance (RDS(ON)), gate-source charge (QGS) and gate-drain charge (QGD), and total gate charge (QG). Ideally, the off-state voltage across the MOSFET should equal the output voltage. Considering the voltage spike when the MOSFET turns off, VDS(MAX) should be greater than 1.5 times the output voltage. The maximum current through the power MOSFET occurs at the minimum input voltage and the maximum output power. The maximum RMS current through the MOSFET is given by Equation (7): RMS(MAX) IN(MAX) MAX I ID = × (7) DMAX can be calculated with Equation (8): OUT IN(MIN) MAX OUT VV D V − ≈ (8) The current rating of the MOSFET should be greater than 1.5 times IRMS. The on resistance of the MOSFET determines the conduction loss, which is given by Equation (9): k R I P (ON) DS 2 RMS cond × × = (9) Where k is the temperature coefficient of the MOSFET. The switching loss is related to QGD and QGS1, which determine the commutation time. QGS1 is the charge between the threshold voltage and the plateau voltage when a driver charges the gate, which can be read in the VGS vs. QG chart in the MOSFET datasheet. QGD is the charge during the plateau voltage. These two parameters are needed to estimate the turn-on and turn-off losses, and can be calculated with Equation (10): SW IN DS PLT DR G GD SW IN DS TH DR G GS1 SW f I V V V R Q f I V V V R Q P × × × − × + × × × − × = (10) Where VTH is the threshold voltage, VPLT is the plateau voltage, RG is the gate resistance, and VDS is the drain-source voltage. Please note that calculating the switching loss is the most difficult part in loss estimation. The formula above provides a simplified equation. For more accurate estimates, the equation becomes much more complex. The total gate charge (QG) is used to calculate the gate drive loss and can be calculated with Equation (11): SW DR G DR f V Q P × × = (11) Where VDR is the drive voltage. Selecting the Output Capacitor The output capacitor keeps the output voltage ripple small and ensures feedback loop stability. The output capacitor impedance must be low at the switching frequency. Ceramic capacitors with X7R dielectrics are recommended for their low ESR characteristics. For most applications, a 4.7 μF ceramic capacitor in parallel with a 22μF electrolytic capacitor is sufficient. Setting the Over-Voltage Protection (OVP) Open-string protection is achieved through the detection of the voltage on the OVP pin. In some cases, an LED string failure results in the feedback voltage always being zero. The part then continues boosting the output voltage higher and higher. If the output voltage reaches the programmed OVP threshold, the protection is triggered. To ensure that the chip functions properly, select the resistor values for the OVP resistor divider to provide an appropriate set voltage. The recommended OVP point is about 1.1 to 1.2 times higher than the output voltage for normal operation. The OVP voltage can be calculated with Equation (12): HIGH OVP LOW R V 1.23 (1 ) R = × + (12) |
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