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STW13NK100Z 数据表(PDF) 3 Page - STMicroelectronics

部件名 STW13NK100Z
功能描述  N-CHANNEL 1000V - 0.56 OHM - 13A TO-247 Zener-Protected SuperMESH Power MOSFET
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STW13NK100Z 数据表(HTML) 3 Page - STMicroelectronics

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STW13NK100Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =1mA,VGS = 0
1000
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating,TC = 125 °C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ± 20V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 150 µA
3
3.75
4.5
V
RDS(on) (1)
Static Drain-source On
Resistance
VGS =10V, ID = 6.5 A
0.56
0.70
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS =15V, ID =6.5 A
14
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V,f= 1MHz,VGS = 0
6000
455
100
pF
pF
pF
Coss eq. (3)
Equivalent Output
Capacitance
VGS =0V, VDS = 0V to 800V
227
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =500 V, ID =7 A
RG =4.7Ω VGS =10 V
(Resistive Load see, Figure 3)
45
35
145
45
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =800V, ID =13 A,
VGS =10V
190
30
100
266
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
13
52
A
A
VSD (1)
ForwardOnVoltage
ISD =13A,VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD =13A,di/dt =100A/µs
VDD =100 V, Tj =25°C
(see test circuit, Figure 5)
820
12.7
31
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD =13A,di/dt =100A/µs
VDD =100 V, Tj =150°C
(see test circuit, Figure 5)
1050
17.8
34
ns
µC
A



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