IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFY4N85X

IXFA4N85X

IXFP4N85X

Note 1. Pulse test, t

 300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

1.2

2.0

S

R

Gi

Gate Input Resistance

3



C

iss

247

pF

C

oss

V

305

pF

C

rss

5

pF

C

o(er)

27

pF

C

o(tr)

60

pF

t

d(on)

13

ns

t

r

27

ns

t

d(off)

28

ns

t

f

20

ns

Q

g(on)

7.0

nC

Q

gs

V

2.3

nC

Q

gd

3.3

nC

R

thJC

0.83

C/W

R

thCS

TO-220

0.50

C/W

Resistive Switching Times

V

R

Effective Output Capacitance

Energy related

Time related

V

V

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

4

A

I

SM

Repetitive, pulse Width Limited by T

JM

16

A

V

SD

I

1.4

V

t

rr

170

ns

Q

RM

770

nC

I

RM

9

A

I

V