IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFA8N85XHV IXFP8N85X

IXFQ8N85X

Note 1. Pulse test, t

 300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

2.7

4.5

S

R

Gi

Gate Input Resistance

3



C

iss

654

pF

C

oss

V

714

pF

C

rss

11

pF

C

o(er)

40

pF

C

o(tr)

120

pF

Q

g(on)

17.0

nC

Q

gs

V

3.6

nC

Q

gd

10.0

nC

t

d(on)

15

ns

t

r

25

ns

t

d(off)

32

ns

t

f

23

ns

R

thJC

0.63

C/W

R

thCS

TO-220

0.50

C/W

TO-3P

0.21

C/W

Resistive Switching Times

V

R

Effective Output Capacitance

Energy related

Time related

V

V

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

8

A

I

SM

Repetitive, pulse Width Limited by T

JM

32

A

V

SD

I

1.4

V

t

rr

125

ns

Q

RM

1.1

μC

I

RM

18.0

A

I

V