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LT3790 数据表(PDF) 21 Page - Linear Technology |
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LT3790 数据表(HTML) 21 Page - Linear Technology |
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21 / 32 page ![]() LT8390 21 8390fa For more information www.linear.com/LT8390 APPLICATIONS INFORMATION From a known power dissipated in the power MOSFET, its junction temperature can be obtained using the following formula: TJ = TA + P • RTH(JA) The junction-to-ambient thermal resistance RTH(JA) in- cludes the junction-to-case thermal resistance RTH(JC) and the case-to-ambient thermal resistance RTH(CA). This value of TJ can then be compared to the original, assumed value used in the iterative calculation process. Optional Schottky Diode (DB, DD) Selection The optional Schottky diodes DB (in parallel with switch B) and DD (in parallel with switch D) conduct during the dead time between the conduction of the power MOSFET switches. They are intended to prevent the body diode of synchronousswitchesBandDfromturningonandstoring charge during the dead time. In particular, DB significantly reduces reverse recovery current between switch B turn- off and switch A turn-on, and DD significantly reduces reverse recovery current between switch D turn-off and switch C turn-on. They improve converter efficiency and reduce switch voltage stress. In order for the diode to be effective, the inductance between it and the synchronous switch must be as small as possible, mandating that these components be placed adjacently. CIN and COUT Selection Input and output capacitance is necessary to suppress voltage ripple caused by discontinuous current moving in and out the regulator. A parallel combination of capaci- tors is typically used to achieve high capacitance and low equivalent series resistance (ESR). Dry tantalum, special polymer,aluminumelectrolyticandceramiccapacitorsare all available in surface mount packages. Capacitors with low ESR and high ripple current ratings, such as OS-CON and POSCAP are also available. Ceramic capacitors should be placed near the regula-tor input and output to suppress high frequency switching spikes. Ceramic capacitors, of at least 1µF, should also be placed from VIN to GND and VOUT to GND as close to the LT8390 pins as possible. Due to their excellent low ESR characteristics, ceramic capacitors can significantly reduce input ripple voltage and help reduce power loss in the higher ESR bulk capacitors. X5R or X7R dielectrics are preferred, as these materials retain their capacitance over wide voltage and temperature ranges. Many ceramic ca- pacitors,particularly0805or0603casesizes,havegreatly reduced capacitance at the desired operating voltage. Input Capacitance CIN: Discontinuous input current is highest in the buck region due to the switch A toggling on and off. Make sure that the CIN capacitor network has low enough ESR and is sized to handle the maximum RMS current. In buck region, the input RMS current is given by: IRMS ≈ IOUT(MAX) • VOUT VIN • VIN VOUT −1 The formula has a maximum at VIN = 2VOUT, where IRMS = IOUT(MAX)/2. This simple worst-case condition is com- monly used for design because even significant deviations do not offer much relief. Output Capacitance COUT: Discontinuous current shifts from the input to the output in the boost region. Make sure that the COUT capacitor network is capable of reducing the output voltage ripple. The effects of ESR and the bulk capacitance must be considered when choosing the right capacitor for a given output ripple voltage. The maximum steady state ripple due to charging and discharging the bulk capacitance is given by: ∆VCAP(BOOST) = IOUT(MAX) • VOUT − VIN(MIN) ( ) COUT • VOUT • f ∆VCAP(BUCK) = VOUT • 1− VOUT VIN(MAX) 8 •L • f2 • COUT The maximum steady ripple due to the voltage drop across the ESR is given by: ∆VESR(BOOST) = VOUT •IOUT(MAX) VIN(MIN) •ESR ∆VESR(BUCK) = VOUT • 1− VOUT VIN(MAX) L • f •ESR |
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