 2014 Microchip Technology Inc.

Preliminary

DS70005206A-page 1

Features

• High Gain:

- Typically 27.5 dB gain across 2.4–2.5 GHz

- Stable gain over temperature -40°C to +85°C

• Linear output power:

- Meets 802.11g OFDM spectrum mask require-

ment up to 22 dBm

- Typically 19 dBm with <3% EVM, 802.11g,

54 Mbps, 110 mA current

- Typically 17.5 dBm with <2.5% EVM, 802.11n,

MCS7-HT20, 50% duty cycle

- Typically 16.5 dBm with <1.75% EVM, MCS9-

HT40, 50% duty cycle

- Meets 802.11b ACPR requirement up to 22 dBm

with 33% power-added efficiency

• High-speed power-up/down

- Turn on/off time (10%-90%) <100 ns

• 10:1 VSWR survivability (unconditionally stable

up to 25 dBm)

• On-chip power detection

- >20 dB dynamic range

- VSWR- and temperature-insensitive

• Simple input/output matching

• Packages available

- 16-contact UQFN (3mm x 3mm)

• All non-Pb (lead-free) devices are RoHS compli-

ant

Applications

• WLAN (IEEE 802.11b/g/n)

• WLAN 256 QAM

• Cordless phones

• 2.4 GHz ISM wireless equipment

1.0

PRODUCT DESCRIPTION

SST12LP22 power amplifier (PA) is based on the

highly-reliable InGaP/GaAs HBT technology.

This PA can be easily configured for power applications

that require high power-added efficiency while operat-

ing over the 2.4-2.5 GHz frequency band. It typically

provides 27.5 dB gain with 33% power-added effi-

SST12LP22 has excellent linearity, typically 19 dBm at

3% EVM with 54 Mbps 802.11g operation; with MCS9,

256 QAM modulation it provides 16.5 dBm at 1.75%

EVM. SST12LP22 also has a single-ended power

detector which lowers the users’ cost for power control.

The power amplifier IC also features easy board-level

usage along with high-speed power-up/-down control.

SST12LP22 is offered in 16-contact UQFN package

and is pin-to-pin compatible to the SST12CP21 high-

power amplifier. See Figure 3-1 for pin assignments

and Table 3-1 for pin descriptions.

SST12LP22

2.4 GHz High-Linearity, High-Efficiency Power Amplifier