L6225D datasheet(5/10 Pages) STMICROELECTRONICS

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L6225

ELECTRICAL CHARACTERISTICS(Tamb =25

°C, Vs = 48V, unless otherwise specified)

(5) Resistive load used. See Fig. 1.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Supply Voltage

Quiescent Supply Current

All Bridges OFF; -25

°C<Tj <125 °C

5.5

Thermal Shutdown Temperature

150

°C

Outp ut DMOS Transistors

IDSS

Leakage Current

VS = 52V

RDS(ON) High-side + Low-side Switch ON

Resistance

Tj =25 °C

1.47

1.69

Ω

Tj =125 °C

2.35

2.7

Ω

Source Drain Diodes

VSD

Forward ON Voltage

ISD = 1.4A, EN = LOW

1.2

trr

Reverse Recovery Time

If = 1.4A

300

tfr

Forward Recovery Time

200

Switching Rates

tD(on)EN Enable to out turn ON delay time (5) ILOAD = 1.4 A

250

tD(on)IN Input to out turn ON delay time (5)

600

tON

Output rise time(5)

105

300

tD(off)EN Enable to out turn OFF delay time(5)

450

tD(off)IN Input to out turn OFF delay time (5)

500

toff

Output fall time(5)

300

tdt

Dead time protection

µs

fCP

Charge pump frequency

0.75

MHz

UVLO comp

Vth(ON) Turn ON threshold

6.6

7.4

Vth(OFF) Turn OFF threshold

5.6

6.4

Logic Inpu t

VINL

Low level logic input voltage

-0.3

0.8

VINH

High level logic input voltage

IINH

High level logic input current

VIN, EN =5 V

µA

IINL

Low level logic input current

VIN, EN = GND

-10

µA

Over Current Protection

IS OVER Input supply over current

protection threshold

2.8

3.55

VDIAG

Open drain low level output

voltage

I = 4 mA

0.4

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