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BAS40LP-7 数据表(PDF) 2 Page - Diodes Incorporated |
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BAS40LP-7 数据表(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page ![]() BAS40LP Document number: DS30503 Rev. 16 - 2 2 of 5 www.diodes.com August 2016 © Diodes Incorporated BAS40LP Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V Forward Continuous Current IFM 200 mA Repetitive Peak Forward Current (Note 6) IFRM 800 mA Non-Repetitive Peak Forward Surge Current @ tp = 1.0s (Note 7) IFSM 1,000 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation PD 250 mW Typical Thermal Resistance, Junction to Ambient (Note 8) RθJA 400 °C/W Operating Temperature Range TJ -55 to +150 °C Storage Temperature Range TSTG -65 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 5) VR 40 — — V IR = 10μA Forward Voltage (Note 5) VF — — 380 1,000 mV tp < 300μs, IF = 1.0mA tp < 300μs, IF = 40mA Reverse Leakage Current (Note 5) IR — 20 200 nA tp < 300μs, VR = 30V Total Capacitance CT — 2.3 5.0 pF VR = 0V, f = 1.0MHz Reverse Recovery Time tRR — — 5.0 ns IF = IR = 10mA to IR = 1.0mA, RL = 100Ω Notes: 5. Short duration pulse test used to minimize self-heating effect. 6. Repetitive peak forward current was tested with tp ≤1s and ∂ ≤ 0.8 square wave. 7. Non-repetitive peak forward current was tested with tp = 1s square wave. 8. 1*MRP FR-4 PC board 2oz.Copper, minimum recommended pad layout per http://www.diodes.com/package-outlines.html. 0.0001 0.001 0.01 0.1 1 0 200 400 600 800 1000 1200 1400 V F, INSTANTANEOUS FORWARD VOLTAGE (mV) Fig.1 Typical Forward Voltage -55oC -40oC 0oC 25oC 75oC 85oC 150oC 125oC 0.0001 0.001 0.01 0.1 1 10 100 1000 0 10 20 30 40 V R, INSTANTANEOUS REVERSE VOLTAGE (V) Fig.2 Typical Reverse Characteristics -40oC 0oC 25oC 75oC 85oC 125oC 150oC |
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