®

1/8

Table 1: Main Product Characteristics

2 A

600 V

175°C

0.85 V

60 ns

STTH2L06

HIGH EFFICIENCY ULTRAFAST DIODE

Table 3: Absolute Ratings (limiting values)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

600

V

7

A

Average forward current

δ = 0.5

DO-41

Tl = 90°C

2

A

SMA

Tl = 100°C

2

SMB

Tl = 115°C

2

Surge non repetitive forward current

DO-41

tp = 10ms

sinusoidal

45

A

SMA / SMB

35

Storage temperature range

-65 to + 175

°C

Maximum operating junction temperature

175

°C

SMA

STTH2L06A

SMB

STTH2L06U

DO-41

STTH2L06

K

A

September 2004

REV. 1

FEATURES AND BENEFITS

DESCRIPTION

The STTH2L06 is using ST Turbo 2 600V planar

Pt doping technology. It is specially suited for

SMPS and base drive transistor circuits.

Packaged in axial, SMA and SMB, this device is

intended for use in high frequency inverters, free

wheeling and polarity protection.

Table 2: Order Codes

Part Number

Marking

STTH2L06

STTH2L06

STTH2L06RL

STTH2L06

Part Number

Marking

STTH2L06A

L6A

STTH2L06U

L6U