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STTH2L06U 数据表(PDF) 4 Page - STMicroelectronics |
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STTH2L06U 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 8 page ![]() STTH2L06 4/8 Figure 7: Reverse recovery time versus dIF/dt (typical values) Figure 8: Reverse recovery charges versus dIF/dt (typical values) Figure 9: Relative variations of dynamic parameters versus junction temperature Figure 10: Transient peak forward voltage versus dIF/dt (typical values) Figure 11: Forward recovery time versus dIF/dt (typical values) Figure 12: Junction capacitance versus reverse voltage applied (typical values) 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 t (ns) rr dI /dt(A/µs) F I =2 x I FF(AV) I=I FF(AV) I =0.5 x I FF(AV) V =400V T =125°C R j 0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 Q (nC) rr I =2 x I FF(AV) I=I FF(AV) I =0.5 x I FF(AV) V =400V T =125°C R j dI /dt(A/µs) F 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 IRM QRR trr T (°C) j I=I Reference: T =125°C FF(AV) j V =400V R 0 5 10 15 20 25 0 50 100 150 200 250 V (V) FP dI /dt(A/µs) F I=I T =125°C FF(AV) j 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 t (ns) fr dI /dt(A/µs) F I=I T =125°C FF(AV) j V =1.1 x V max. FR F 1 10 100 1 10 100 1000 C(pF) V (V) R F=1MHz V =30mV T =25°C OSC RMS j |
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