AM29PDLI27H datasheet(13/68 Pages) SPANSION

13 / 68 page

June 30, 2003

Am29PDL127H

ADV ANCE

I N FO RMAT I O N

DEVICE BUS OPERATIONS

This section describes the requirements and use of

the device bus operations, which are initiated through

the internal command register. The command register

itself does not occupy any addressable memory loca-

tion. The register is a latch used to store the com-

mands, along with the address and data information

needed to execute the command. The contents of the

The state machine outputs dictate the function of the

device. Table 1 lists the device bus operations, the in-

puts and control levels they require, and the resulting

output. The following subsections describe each of

these operations in further detail.

Table 1.

Am29PDL127H Device Bus Operations

Legend: L = Logic Low = V

IL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 8.5–9.5 V, X = Don’t Care, SA = Sector Address,

IN = Address In, DIN = Data In, DOUT = Data Out

Notes:

1. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the High

Voltage Sector Protection section.

2. WP#/ACC must be high when writing to sectors 0, 1, 268, or 269.

Requirements for Reading Array Data

To read array data from the outputs, the system must

drive the OE# and appropriate CE# pins to V

IL. CE# is

the power control. OE# is the output control and gates

array data to the output pins. WE# should remain at

IH.

The internal state machine is set for reading array data

upon device power-up, or after a hardware reset. This

ensures that no spurious alteration of the memory

content occurs during the power transition. No com-

mand is necessary in this mode to obtain array data.

Standard microprocessor read cycles that assert valid

addresses on the device address inputs produce valid

data on the device data outputs. Each bank remains

enabled for read access until the command register

contents are altered.

Refer to the AC Characteristics table for timing specifi-

cations and to Figure 11 for the timing diagram. I

CC1 in

the DC Characteristics table represents the active cur-

rent specification for reading array data.

Random Read (Non-Page Read)

Address access time (t

ACC) is equal to the delay from

stable addresses to valid output data. The chip enable

access time (t

CE ) is the delay from the stable ad-

dresses and stable CE# to valid data at the output in-

puts. The output enable access time is the delay from

the falling edge of the OE# to valid data at the output

inputs (assuming the addresses have been stable for

at least t

ACC–tOE time).

Page Mode Read

The device is capable of fast page mode read and is

compatible with the page mode Mask ROM read oper-

ation. This mode provides faster read access speed

for random locations within a page. Address bits

A22–A3 select an 8 word page, and address bits

A2–A0 select a specific word within that page. This is

an asynchronous operation with the microprocessor

supplying the specific word location.

The random or initial page access is t

ACC or tCE and

subsequent page read accesses (as long as the loca-

tions specified by the microprocessor falls within that

page) is equivalent to t

PACC. When CE# is deasserted

(CE#=V

IH), the reassertion of CE# for subsequent ac-

Operation

CE#

OE#

WE#

RESET#

WP#/ACC

Addresses

(A22–A0)

DQ15–

DQ0

Read

OUT

Write

AIN

DIN

Standby

IO±

0.3 V

IO ±

0.3 V

X (Note 2)

High-Z

Output Disable

High-Z

Reset

High-Z

Temporary Sector Unprotect (High

Voltage)

VID

XAIN

DIN

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