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IRFS4410 数据表(PDF) 2 Page - International Rectifier |
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IRFS4410 数据表(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRFB4410/IRFS4410/IRFSL4410 2 www.irf.com Notes: Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.14mH RG = 25Ω, IAS = 58A, VGS =10V. Part not recommended for use above this value. ISD ≤ 58A, di/dt ≤ 650A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%. S D G Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.094 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 8.0 10 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 RG Gate Input Resistance ––– 1.5 ––– Ω f = 1MHz, open drain Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 120 ––– ––– S Qg Total Gate Charge ––– 120 180 nC Qgs Gate-to-Source Charge ––– 31 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 44 ––– td(on) Turn-On Delay Time ––– 24 ––– ns tr Rise Time ––– 80 ––– td(off) Turn-Off Delay Time ––– 55 ––– tf Fall Time ––– 50 ––– Ciss Input Capacitance ––– 5150 ––– pF Coss Output Capacitance ––– 360 ––– Crss Reverse Transfer Capacitance ––– 190 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 420 ––– Coss eff. (TR) Effective Output Capacitance (Time Related)h ––– 500 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 96 c A (Body Diode) ISM Pulsed Source Current ––– ––– 380 A (Body Diode) d VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 38 56 ns TJ = 25°C VR = 85V, ––– 51 77 TJ = 125°C IF = 58A Qrr Reverse Recovery Charge ––– 61 92 nC TJ = 25°C di/dt = 100A/µs g ––– 110 170 TJ = 125°C IRRM Reverse Recovery Current ––– 2.8 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions VDS = 50V, ID = 58A ID = 58A VGS = 20V VGS = -20V MOSFET symbol showing the VDS = 80V Conditions VGS = 10V g VGS = 0V VDS = 50V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V i, See Fig.11 VGS = 0V, VDS = 0V to 80V h, See Fig. 5 TJ = 25°C, IS = 58A, VGS = 0V g integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA d VGS = 10V, ID = 58A g VDS = VGS, ID = 150µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C ID = 58A RG = 4.1Ω VGS = 10V g VDD = 65V |
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