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BCR3KM 数据表(PDF) 2 Page - Mitsubishi Electric Semiconductor

部件名 BCR3KM
功能描述  LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
PDF  5 Pages
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制造商  MITSUBISHI [Mitsubishi Electric Semiconductor]
网页  http://www.mitsubishichips.com
标志 MITSUBISHI - Mitsubishi Electric Semiconductor

BCR3KM 数据表(HTML) 2 Page - Mitsubishi Electric Semiconductor

  BCR3KM Datasheet HTML 1Page - Mitsubishi Electric Semiconductor BCR3KM Datasheet HTML 2Page - Mitsubishi Electric Semiconductor BCR3KM Datasheet HTML 3Page - Mitsubishi Electric Semiconductor BCR3KM Datasheet HTML 4Page - Mitsubishi Electric Semiconductor BCR3KM Datasheet HTML 5Page - Mitsubishi Electric Semiconductor  
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Feb.1999
V2. High sensitivity (IGT
≤ 10mA) is also available. (IGT item Œ)
V3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5
°C/W.
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Rth (j-a)
Tj=125
°C, VDRM applied
Tc=25
°C, ITM=4.5A, Instantaneous measurement
Tj=25
°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25
°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125
°C, VD=1/2VDRM
Junction to case V3
Junction to ambient
Unit
Repetitive peak off-state current
On-state voltage
Gate trigger voltage V2
Gate trigger current V2
Gate non-trigger voltage
Thermal resistance
Thermal resistance
Limits
Max.
2.0
1.5
1.5
1.5
1.5
15V2
15V2
15V2
—
4.0
50
!
@
#
!
@
#
Typ.
—
—
—
—
—
—
—
—
—
—
—
Min.
—
—
—
—
—
—
—
—
0.2
—
—
mA
V
V
V
V
mA
mA
mA
V
°C/W
°C/W
Symbol
Parameter
Test conditions
ELECTRICAL CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
PERFORMANCE CURVES
MAXIMUM ON-STATE
CHARACTERISTICS
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE
CURRENT
CONDUCTION TIME
(CYCLES AT 60Hz)
3.8
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
TC = 25
°C
100
23
5 7 101
23
5 7 102
44
30
35
20
25
10
15
5
40
0



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