SS2P3 datasheet(2/4 Pages) VISHAY

部件名	SS2P3

功能描述	High Current Density Surface Mount Schottky Barrier Rectifiers

PDF	4 Pages

Scroll/Zoom	100%

制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

标志

2 / 4 page

www.vishay.com

Document Number 88910

02-Nov-04

VISHAY

SS2P2, SS2P3 & SS2P4

Vishay Semiconductors

Electrical Characteristics

TA = 25 °C, unless otherwise specified

Notes:

(1) Pulse test: 300µs pulse width, 1 % duty cycle

Thermal Characteristics

TA = 25 °C, unless otherwise specified

Notes:

(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. RθJL is mea-

sured at the terminal of cathode band. RθJC is measured at the top centre of the body

Parameter

Test condition

Symbol

Typ

Max.

Unit

Maximum instantaneous

forward voltage(1)

at IF = 2 A, TJ = 25 °C

at IF = 2 A, TJ = 125 °C

0.50

0.43

0.55

0.50

Maximum reverse current at

rated VRM(1)

TJ = 25 °C

TJ = 125 °C

150

µA

Typical junction capacitance

at 4.0 V, 1 MHz

110

Parameter

Symbol

SS2P2

SS2P3

SS2P4

Unit

Typical thermal resistance(1)

RθJA

RθJL

RθJC

115

°C/W

SS2P3 数据表(PDF) 2 Page - Vishay Siliconix

SS2P3 数据表(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4

数据表下载